3-155 ne685m13 nec's npn silicon transistor ? new miniature m13 package: ? small transistor outline ? 1.0 x 0.5 x 0.5 mm ? low profile / 0.50 mm package height ? flat lead style for better rf performance ? high gain bandwidth product: f t = 12 ghz ? low noise figure: nf = 1.5 db at 2 ghz features outline dimensions (units in mm) package outline m13 part number ne685m13 eiaj 1 registered number 2sc5617 package outline m13 symbols parameters and conditions units min typ max f t gain bandwidth at v ce = 3 v, i c = 10 ma, f = 2 ghz ghz 12.0 nf noise figure at v ce = 3 v, i c = 3 ma, f = 2 ghz, z s = z opt db 1.5 2.5 |s 21e | 2 insertion power gain at v ce = 3 v, i c = 10 ma, f = 2 ghz db 7.0 11.0 h fe 2 forward current gain at v ce = 3 v, i c = 10 ma 75 140 i cbo collector cutoff current at v cb = 5 v, i e = 0 a 0.1 i ebo emitter cutoff current at v eb = 1 v, i c = 0 a 0.1 c re 3 feedback capacitance at v cb = 3 v, i e = 0, f = 1 mhz pf 0.4 0.7 electrical characteristics (t a = 25 c) notes: 1. electronic industrial association of japan. 2. pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. capacitance is measured with emitter and case connected to the guard terminal at the bridge. description nec's ne685m13 transistor is designed for low noise, high gain, and low cost requirements. this high f t part is well suited for low voltage/low current designs for portable wireless communications and cellular radio applications. nec's new low profile/flat lead style "m13" package is ideal for today's portable wireless applications. the ne685 is also available in six different low cost plastic surface mount package styles. 1. emitter 2. base 3. collector pin connections 0.125 +0.1 ?0.05 0.50.05 0.1 0.1 0.2 +0.1 ?0.05 0.35 0.7 0.35 0.15 +0.1 ?0.05 0.15 +0.1 ?0.05 1.0 +0.1 ?0.05 0.5 +0.1 ?0.05 0.70.05 1 2 3 y2 0.3 0.2 0.2 (bottom view)
3-156 notes: 1. operation in excess of any one of these parameters may result in permanent damage. 2. with device mounted on 1.08 cm 2 x 1.2 mm thick glass epoxy pcb. symbols parameters units ratings v cbo collector to base voltage v 9.0 v ceo collector to emitter voltage v 6.0 v ebo emitter to base voltage v 2.0 i c collector current ma 30 p t 2 total power dissipation mw 140 t j junction temperature c 150 t stg storage temperature c -65 to +150 absolute maximum ratings 1 (t a = 25 c) ne685m13 typical performance curves (t a = 25 c) collector to base voltage, v cb (v) reverse transfer capacitance, c re (pf) reverse transfer capacitance vs. collector to base voltage mounted on glass epoxy pcb (1.08 cm 2 x 1.0 mm (t) ) 300 250 200 150 140 100 50 0 25 50 75 100 125 150 f = 1 mhz 0.6 0.5 0.4 0.3 0.2 0.1 012 45678 39 ambient temperature, t a ( o c) total power dissipation, p tot (mw) total power dissipation vs. ambient temperature v ce = 3 v 30 25 15 10 5 20 0 0.4 0.2 0.6 0.8 1.0 base to emitter voltage, t be (v) collector current, i c (ma) collector current vs. base to emitter voltage 40 10 20 30 024 6 8 i b = 30 a 60 a 90 a 120 a 150 a 180 a 210 a 240 a 270 a 300 a collector to emitter voltage, v ce (v) collector current, i c (ma) collector current vs. collector to emitter voltage part number quantity NE685M13-T3-A 3k pcs./reel ordering information
3-157 ne685m13 gain bandwidth product vs. collector current frequency, f (ghz) insertion power gain |s 21e | 2 , (db) insertion power gain vs. frequency frequency, f (ghz) insertion power gain |s 21e | 2 , (db) insertion power gain vs. frequency collector current, i c (ma) insertion power gain, is 21e i 2 maximum available gain, mag (db) maximum stable gain, msg (db) insertion power gain, mag, msg vs. collector current collector current, i c (ma) insertion power gain, is 21e i 2 maximum available gain, mag (db) maximum stable gain, msg (db) insertion power gain, mag, msg vs. collector current collector current, i c (ma) gain bandwidth product, f t (ghz) collector current, i c (ma) dc current gain, h fe dc current gain vs. collector current typical performance curves (t a = 25 c) v ce = 3 v 1 000 100 10 110 0.1 100 v ce = 3 v f = 2 ghz 16 14 12 10 8 6 4 2 0 10 1 100 v ce = 1 v i c = 10 ma 35 30 25 20 15 10 5 0 0.1 1 10 v ce = 3 v i c = 10 ma 35 30 25 20 15 10 5 0 0.1 1 10 v ce = 1 v f = 1 ghz 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 v ce = 3 v f = 1 ghz 20 15 10 5 0 1 10 100 mag msg |s 21e | 2
3-158 collector current, i c (ma) noise figure nf, (db) noise figure, associated gain vs. collector current collector current, i c (ma) noise figure nf, (db) noise figure, associated gain vs. collector current insertion power gain, mag, msg vs. collector current collector current, i c (ma) insertion power gain, is 21e i 2 maximum available gain, mag (db) maximum stable gain, msg (db) collector current, i c (ma) insertion power gain, is 21e i 2 maximum available gain, mag (db) maximum stable gain, msg (db) insertion power gain, mag, msg vs. collector current typical performance curves (t a = 25 c) ne685m13 v ce = 1 v f = 2 ghz 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 v ce = 3 v f = 2 ghz 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 5 4 3 2 1 0 20 16 12 8 4 0 1 10 100 v ce = 1 v f = 1 ghz g a nf 5 4 3 2 1 0 20 16 12 8 4 0 1 10 100 v ce = 3 v f = 1 ghz g a nf associated gain, g a (db) associated gain, g a (db)
3-159 typical performance curves (t a = 25 c) ne685m13 collector current, i c (ma) noise figure nf, (db) noise figure, associated gain vs. collector current collector current, i c (ma) noise figure nf, (db) noise figure, associated gain vs. collector current associated gain, g a (db) associated gain, g a (db) 5 4 3 2 1 0 20 16 12 8 4 0 1 10 100 v ce = 1 v f = 2 ghz g a nf 5 4 3 2 1 0 20 16 12 8 4 0 1 10 100 v ce = 3 v f = 2 ghz g a nf
3-160 ne685m13 typical scattering parameters (t a = 25 c) j50 j25 j10 0 -j10 -j25 -j50 -j100 j100 50 10 25 s 22 100 s 11 frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) note: 1. gain calculations: ne685m13 v c = 2 v, i c = 5 ma mag = maximum available gain msg = maximum stable gain 0.100 0.879 -11.18 10.895 169.79 0.017 85.46 0.980 -8.26 0.05 27.96 0.200 0.854 -24.79 10.531 159.27 0.033 76.47 0.943 -15.79 0.13 25.05 0.300 0.813 -36.17 9.980 150.16 0.047 70.32 0.894 -22.51 0.19 23.25 0.400 0.764 -46.95 9.356 142.00 0.059 65.55 0.843 -28.26 0.24 21.98 0.500 0.677 -58.07 8.645 133.16 0.069 59.99 0.756 -32.30 0.37 21.00 0.600 0.634 -67.22 7.952 127.18 0.077 57.31 0.701 -35.05 0.43 20.16 0.700 0.597 -75.01 7.355 122.04 0.083 55.43 0.657 -38.07 0.47 19.46 0.800 0.560 -82.74 6.818 117.17 0.089 53.53 0.615 -40.74 0.51 18.82 0.900 0.530 -89.38 6.315 113.03 0.095 52.58 0.579 -42.38 0.56 18.24 1.000 0.501 -95.62 5.872 109.14 0.099 51.55 0.542 -44.09 0.61 17.73 1.100 0.478 -101.10 5.483 105.72 0.104 50.81 0.515 -45.60 0.65 17.22 1.200 0.459 -106.13 5.137 102.65 0.108 50.49 0.491 -47.11 0.68 16.79 1.400 0.425 -114.91 4.543 97.14 0.116 50.07 0.451 -49.16 0.76 15.94 1.600 0.399 -122.59 4.068 92.39 0.123 50.09 0.417 -50.64 0.82 15.18 1.800 0.379 -129.37 3.678 88.20 0.131 50.25 0.394 -52.06 0.88 14.49 2.000 0.364 -135.19 3.369 84.36 0.138 50.70 0.377 -53.48 0.92 13.87 2.200 0.350 -140.57 3.103 80.91 0.146 51.06 0.362 -55.00 0.96 13.27 2.400 0.339 -145.78 2.882 77.59 0.154 51.17 0.351 -56.70 0.99 12.73 2.600 0.330 -150.79 2.695 74.45 0.162 51.40 0.343 -58.44 1.02 11.43 2.800 0.321 -155.59 2.529 71.46 0.170 51.61 0.335 -60.35 1.04 10.49 3.000 0.312 -160.44 2.386 68.56 0.178 51.67 0.328 -62.49 1.06 9.75 3.200 0.306 -165.34 2.263 65.81 0.186 51.55 0.324 -65.12 1.08 9.16 3.400 0.301 -170.19 2.150 63.12 0.194 51.53 0.323 -67.74 1.09 8.63 3.600 0.296 -175.11 2.048 60.52 0.202 51.43 0.323 -70.53 1.10 8.14 3.800 0.291 -179.68 1.957 58.06 0.210 51.16 0.327 -73.25 1.10 7.72 4.000 0.286 176.05 1.874 55.66 0.218 51.06 0.332 -75.87 1.11 7.33 mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , +90o +135o -135o -90o -45o +45o +0o 246 81012 +180o s 11 s 21
3-161 ne685m13 typical scattering parameters (t a = 25 c) frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne685m13 v c = 3 v, i c = 10 ma 0.100 0.830 -14.89 15.406 167.04 0.015 79.15 0.969 -9.82 0.15 30.06 0.200 0.791 -30.25 14.529 155.17 0.029 74.31 0.918 -18.40 0.18 26.96 0.300 0.734 -43.35 13.385 144.88 0.041 68.95 0.852 -25.66 0.25 25.11 0.400 0.675 -55.24 12.178 136.08 0.050 64.19 0.786 -31.42 0.32 23.86 0.500 0.584 -67.02 10.911 127.43 0.058 59.86 0.690 -34.94 0.46 22.75 0.600 0.541 -76.48 9.839 121.58 0.064 57.87 0.631 -37.08 0.52 21.86 0.700 0.506 -84.40 8.943 116.65 0.069 56.90 0.586 -39.46 0.57 21.10 0.800 0.473 -92.17 8.163 112.19 0.075 55.96 0.546 -41.46 0.62 20.39 0.900 0.448 -98.62 7.477 108.45 0.079 55.53 0.513 -42.47 0.66 19.74 1.000 0.423 -104.84 6.891 104.94 0.083 55.34 0.478 -43.52 0.71 19.17 1.100 0.405 -110.11 6.385 101.90 0.088 55.24 0.455 -44.52 0.75 18.61 1.200 0.390 -114.95 5.947 99.15 0.092 55.23 0.435 -45.57 0.78 18.09 1.400 0.364 -123.47 5.216 94.22 0.100 55.77 0.401 -46.75 0.85 17.16 1.600 0.344 -130.71 4.640 90.04 0.109 56.13 0.373 -47.51 0.90 16.29 1.800 0.329 -137.11 4.179 86.28 0.117 56.73 0.355 -48.39 0.94 15.52 2.000 0.318 -142.56 3.809 82.88 0.126 57.15 0.341 -49.39 0.97 14.81 2.200 0.308 -147.52 3.499 79.73 0.135 57.35 0.330 -50.56 1.00 14.15 2.400 0.300 -152.37 3.242 76.73 0.144 57.60 0.322 -51.97 1.02 12.70 2.600 0.294 -157.24 3.024 73.87 0.153 57.62 0.316 -53.62 1.03 11.86 2.800 0.287 -161.72 2.834 71.13 0.162 57.53 0.310 -55.48 1.05 11.10 3.000 0.282 -166.38 2.670 68.47 0.171 57.39 0.304 -57.60 1.06 10.45 3.200 0.277 -170.99 2.526 65.91 0.180 57.27 0.302 -60.04 1.07 9.89 3.400 0.273 -175.85 2.397 63.40 0.189 56.83 0.301 -62.78 1.07 9.38 3.600 0.270 179.25 2.282 60.99 0.197 56.62 0.302 -65.63 1.08 8.91 3.800 0.266 174.83 2.179 58.67 0.207 56.19 0.306 -68.43 1.08 8.51 4.000 0.263 170.53 2.084 56.42 0.215 55.67 0.311 -71.13 1.08 8.11 j50 j25 j10 0 -j10 -j25 -j50 -j100 j100 50 10 25 s 22 100 s 11 +90o +135o -135o -90o -45o +45o +0o 5 20 10 15 +180o s 21 s 12 note: 1. gain calculations: mag = maximum available gain msg = maximum stable gain mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | ,
3-162 ne685m13 nonlinear model ne685m13 model range frequency: 0.1 to 4.0 ghz bias: v ce = 0.5 v to 3 v, i c = 0.5 ma to 20 ma date: 09/02 schematic base c cbpkg c cb c ce l bx l b l e l ex l cx c cepkg emitter collector q1 bjt nonlinear model parameters (1) (1) gummel-poon model parameters q1 parameters q1 is 7e-16 mjc 0.34 bf 109 xcjc 0.7 nf 1 cjs 0 vaf 15 vjs 0.75 ikf 0.19 mjs 0 ise 7.9e-13 fc 0.5 ne 2.19 tf 2.5e-12 br 1 xtf 5.2 nr 1.08 vtf 4.58 var 12.4 itf 0.011 ikr 0 ptf 0 isc 0 tr 1e-9 nc 2 eg 1.11 re 1.3 xtb 0 rb 10 xti 3 rbm 8.34 kf 0 irb 0.009 af 1 rc 10 cje 0.4e-12 vje 0.812 mje 0.5 cjc 0.18e-12 vjc 0.75 parameter units time seconds (s) capacitance farads (f) inductance henries (h) resistance ohms ( ? ) voltage volts (v) current amps (a) units parameters 68533 c cb 0.1e-12 c ce 0.14e-12 l b 0.35e-9 l e 0.4e-9 c cbpkg 0.05e-12 c cepkg 0.05e-12 l bx 0.05e-9 l cx 0.05e-9 l ex 0.05e-9 additional parameters life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. exclusive north american agent for nec rf, microwave & optoelectronic semiconductors california eastern laboratories ? headquarters ? 4590 patrick henry drive ? santa clara, ca 95054-1817 ? (408) 988-3500 ? telex 34-6393 ? fax (408) 988-0279 internet: http://www.cel.com 03/18/2002 data subject to change without notice
3-163 4590 patrick henry drive santa clara, ca 95054-1817 telephone: (408) 919-2500 facsimile: ( 408 ) 988-0279 subject: compliance with eu directives cel certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substances in electrical and electronic equipment (rohs) and the requirements of eu directive 2003/11/ec restriction on penta and octa bde. cel pb-free products have the same base part number with a suffix added. the suffix ? indicates that the device is pb-free. the ?z suffix is used to designate devices containing pb which are exempted from the requirement of rohs directive (*). in all cases the devices have pb-free terminals. all devices with these suffixes meet the requirements of the rohs directive. this status is based on cel? understanding of the eu directives and knowledge of the materials that go into its products as of the date of disclosure of this information. restricted substance per rohs concentration limit per rohs (values are not yet fixed) concentration contained in cel devices -a -az lead (pb) < 1000 ppm not detected (*) mercury < 1000 ppm not detected cadmium < 100 ppm not detected hexavalent chromium < 1000 ppm not detected pbb < 1000 ppm not detected pbde < 1000 ppm not detected if you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. important information and disclaimer: information provided by cel on its website or in other communications concerting the substan ce content of its products represents knowledge and belief as of the date that it is provided. cel bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. efforts are underway t o better integrate information from third parties. cel has taken and continues to take reasonable steps to provide representative and ac curate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. cel and ce l suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall cel? liability arising out of such information exceed the total purchase price of the cel part(s) at issue s old by cel to customer on an annual basis. see cel terms and conditions for additional clarification of warranties and liability.
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